Open Access Open Access  Restricted Access Subscription or Fee Access

Simulation and Characterisation of HfO2/ALGaN/GaN MOS-HEMT with Source Field Plate for Improved Breakdown Voltage

S. Suganya, P. Anandan


The AlGaN/GaN based HEMTs are the most promising devices for high power and high frequency applications, due to wide band- gap material (3.4 eV of GaN), high density of two-dimensional electron gas (2DEG) in the buried channel, low intrinsic carrier density, and high saturation velocity. From this novel device structure by introducing a source field-plated in the metal oxide Semiconductor high electron mobility transistors (MOS-HEMT) structure having a relatively short gate length and short gate-to-drain distances. The 2D break down analysis is performed using Sentaurus TCAD simulator. The effects of gate to drain distance (Lgd),  source field plate length (Lfp) and passivation layer thickness(tp) on break down voltage (BV) is analyzed. The simulations are done using the hydro dynamic (HD) model, which is calibrated / validated with the previously published experimental results. The breakdown voltage is observed to increase with increase in Lf p and tp. Very high breakdown voltage is obtained by optimizing the Lf p to 3 mm and tp to 200nm at a fixed gate to drain distance of 3.4 mm. The results show a great potential application of the ultra-thin HfO2 source field plated AlGaN/GaN MOS HEMT to deliver high currents and power densities in high power microwave Technologies.

Full Text:



Takuma Nanjo1Misaichi Takeuchi2), Misaichi Takeuchi2Muneyoshi Suita1, Toshiyuki Oishi1, Yuji Abe1, Yasunori Tokuda1 and Yoshinobu Aoyagi2 Top of FormBottom of Form“Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors” in applied physics letter, volume 92 issues 26.

Nsele Seraphin Dieudonne, Laurent Escotte, Jean-Guy Tartarin, Stephane Piotrowicz, Sylvain L. Delage “Broadband Frequency Dispersion Small Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs”. EEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE), 2013, 60 (4), pp. 1372-1378

Kaddeche, M. ; Electron. Dept., Mentouri Univ. of Constantine, Constantine, Algeria ; Telia, A. ; Soltani, A. “Modeling of AlGaN/GaN HEMTs using Field-Plate Technology”

Xie Gang, Edward Xu1, Niloufar Hashemi1, Zhang Bo, Fred Y. Fu3 and Wai Tung Ng1”An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage “Chinese physics, volume 21,number 8.

J. P. Ibbetson1, P. T. Fini1, K. D. Ness1, S. P. DenBaars1, J. S. Speck1 and U. K. Mishra1 “Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors” Applied physics letter,volume 77, issue 2.



  • There are currently no refbacks.

Creative Commons License
This work is licensed under a Creative Commons Attribution 3.0 License.