Quaternary InALGan Double Heterostructure with Dual Channel for Higher Power and Frequency Applications

Abstract

In this work, the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs was significantly improved compared to that of conventional AlGaN/GaN HEMTs for the device with certain gate dimensions and a certain gate–drain distance. The DH-HEMTs also demonstrated a maximum output power, a maximum power-added efficiency and a linear gain at the drain supply voltage of certain voltage at GHz frequency.