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Performance of ION/ IOFF Ratio Based on Epitaxial Graphene on Sic by Field-Effect Transistors Model
Abstract
The physical and electrical properties of graphene have motivated a significant amount research for various applications. Graphene is pure carbon in the form of a very thin, nearly transparent sheet, one atom thick. It is remarkably strong for its very low weight (100 times stronger than steel) and it conducts heat and electricity with great efficiency. In recent experiments, epitaxial graphene on SiC substrate proves to be the best channel material for FETs, which provides a semiconducting bandgap of 0.26ev. Epitaxial graphene on SiC exhibits a wider gap than other alternative options such as bilayer graphene. Lithography need not required and is performed in 2-D. A model is analyzed based on graphene on SiC which provides good performance of a nanoscale FET. The analyzed model provides the way to the design parameter space. Current can be modulated by four means of magnitude. An Ion/Ioff ratio of 50 and a subthreshold slope of 145mV/dec can be obtained with a supply voltage of 0.25 V which shows a significant progress toward solid- state integration of graphene electronics.
References
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science, vol. 306, no. 5696, p. 666, Oct. 2004.
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature, vol. 438, no. 7065, pp. 197–200, Nov. 2005.
K. Geim and K. S. Novoselov, “The rise of graphene,” Nature Mater., vol. 6, no. 3, pp. 183–191, Mar. 2007.
X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai, “Chemically derived, ultrasmooth graphene nanoribbon semiconductors,” Science, vol. 319, no. 5867, pp. 1229–1232, Feb. 2008, 1150878.
F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake, M. I. Katsnelson, and K. S. Novoselov, “Detection of individual gas molecules adsorbed on graphene,” Nature Mater., vol. 6, no. 9, pp. 652– 655, Sep. 2007.
Y.-W. Son, M. L. Cohen, and S. G. Louie, “Energy gaps in graphene nanoribbons,” Phys. Rev. Lett., vol. 97, no. 21, p. 216 803, Nov. 2006.
R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and P. Avouris, “Singleand multi-wall carbon nanotube field-effect transistors,” Appl. Phys. Lett., vol. 73, no. 17, pp. 2447–2449, Oct. 1998. [Online]. Available:http://link.aip.org/link/?APL/73/2447/1.
Biel, X. Blase, F. Triozon, and S. Roche, “Anomalous doping effects on charge transport in graphene nanoribbons,” Phys. Rev. Lett., vol. 102, no. 9, p. 096 803, Mar. 2009. [Online]. Available: http://link.aps.org/ abstract/PRL/v102/e096803.
T. Ohta, A. Bostwick, T. Seyller, K. Horn, and E. Rotenberg, “Controlling the electronic structure of bilayer graphene,” Science, vol. 313, no. 5789, pp. 951–954, Aug. 2006.
G. Fiori and G. Iannaccone, “On the possibility of tunable-gap bilayer graphene FET,” IEEE Electron Device Lett., vol. 30, no. 3, pp. 261–264, Mar. 2009.
Y. Q. Wu, P. D. Ye, M. A. Capano, Y. Xuan, Y. Sui, M. Qi, J. A. Cooper, T. Shen, D. Pandey, G. Prakash, and R. Reifenberger, “Top-gated graphene field-effect-transistors formed by decomposition of SiC,” Appl. Phys. Lett., vol. 92, no. 9, p. 092 102, Mar. 2008.
G. Fiori and G. Iannaccone, “Simulation of graphene nanoribbon fieldeffect transistors,” IEEE Electron Device Lett., vol. 28, no. 8, pp. 760–762, Aug. 2007.
S. Y. Zhou, G. H. Gweon, A. V. Fedorov, P. N. First, W. A. de Heer, D. H. Lee, F. Guinea, A. Castro Neto, and A. Lanzara, “Substrate-induced bandgap opening in epitaxial graphene,” Nature Mater., vol. 6, no. 10, pp. 770–775, Oct. 2007.
X. Peng and R. Ahuja, “Symmetry breaking induced bandgap in epitaxial graphene layers on SiC,” Nano Lett., vol. 8, no. 12, pp. 4464–4468, Dec. 2008.
S. Kim, J. Ihm, H. J. Choi, and Y.-W. Son, “Origin of anomalous electronic structures of epitaxial graphene on Silicon Carbide,” Phys. Rev. Lett., vol. 100, no. 17, p. 176 802, May 2008.
V. W. Brar, Y. Zhang, Y. Yayon, T. Ohta, J. L. McChesney, A. Bostwick, E. Rotenberg, K. Horn, and M. F. Crommie, “Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC,” Appl. Phys. Lett., vol. 91, no. 12, p. 122 102, Sep. 2007. [Online]. Available: http://link.aip.org/link/?APL/91/122102/1
J. Kedzierski, P.-L. Hsu, P. Healey, P. Wyatt, C. Keast, M. Sprinkle, C. Berger, and W. de Heer, “Epitaxial graphene transistors on SiC substrates,” IEEE Trans. Electron Devices, vol. 55, no. 8, pp. 2078–2085, Aug. 2008.
G. Mugnaini and G. Iannaccone, “Physics-based compact models of nanoscale MOSFETs. Part I: Transition from drift-diffusion to ballistic transport,” IEEE Trans. Electron Devices, vol. 52, no. 8, pp. 1795–1801, Aug. 2005.
P. Michetti, G. Mugnaini, and G. Iannaccone, “Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime,” IEEE Trans. Electron Devices, vol. 56, no. 7, pp. 1402–1410, Jul. 2009.
P. Michetti and G. Iannaccone, “Analytical model of one-dimensional carbon-based Schottky-barrier transistors,” IEEE Trans. Electron Devices, vol. 57, no. 7, pp. 1616–1625, Jul. 2010.
M. Buttiker, “Coherent and sequential tunneling in series barriers,” IBM J. Res. Develop., vol. 32, no. 1, pp. 63–75, Jan. 1988.
S.-H. Oh, D. Monroe, and J. Hergenrother, “Analytic description of shortchannel effects in fully-depleted double-gate and cylindrical, surroundinggate MOSFETs,” IEEE Electron Device Lett., vol. 21, no. 9, pp. 445–447, Sep. 2000.
M. Lemme, T. Echtermeyer, M. Baus, and H. Kurz, “A graphene fieldeffect device,” IEEE Electron Device Lett., vol. 28, no. 4, pp. 282–284, Apr. 2007.
X. Liang, Z. Fu, and S. Y. Chou, “Graphene transistors fabricated via transfer-printing in device active-areas on large wafer,” Nano Lett., vol. 7, no. 12, pp. 3840–3844, Dec. 2007. [Online]. Available: http://dx.doi.org/10.1021/nl072566s
International Technology Roadmap for Semiconductor 2007. [Online]. Available: http://public.itrs.net
P. Michetti, M. Cheli, and G. Iannaccone, “Performance projection of tunneling transistors based on graphene on SiC,” Appl. Phys. Lett., vol. 96, no. 13, p. 133 508, Mar. 2010.
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