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Simulation of Algan Channel High Electron Mobility Transistor using Sentaurus TCAD
Abstract
Enhanced performance of RF power modules is required in a information society. To satisfy these requirements, so designed a novel High-Electron Mobility Transistor (HEMT) structure employing wider bandgap AlGaN for a channel layer, which we called AlGaN channel HEMT. The wider bandgap is more effective for higher voltage operation of HEMTs and contributes to the increase of output power in RF power modules. As a result, fabricated Al-GaN channel HEMTs had much higher breakdown voltages than those of conventional GaN channel HEMTs with good pinchoff operation and sufficiently high drain current density without current collapse. Furthermore, specific ON-state resistances of fabricated AlGaN channel HEMTs were competitive with the best values of reported GaN- and SiC-based devices with similar breakdown voltages.
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