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Design of Radio Frequency Power Amplifier in L-BAND using BJT Device AT - 42070 for Orthogonal Frequency Division Multiplexing

G. Sharmila, E.G. Govindan, V. Mantharachalam

Abstract


Communication plays very important role in day-to-day life of people. Due to fast growing age, multi carrier communication is preferred over single carrier waves for better transmission. One of the advantages of Orthogonal Frequency Division Multiplexing system over the single carrier system is the better performance in multipath environment. For narrowband operation, one may design an RF power amplifier whose noise figure and optimal gain are close to the theoretical optima allowed within an explicit power constraint.This paper introduces the design of a 1.5 GHz two-stage RF power amplifier using CAD software. The proposed design aims to provide a better gain of 29.1 dB delivering optimal power of 20.53 dBm suitable for wireless communication.

Keywords


Orthogonal Frequency Division Multiplexing, Wireless Communication.

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References


Golmie, N.; Chevrollier, N.; Rebala, "Bluetooth and WLAN coexistence: challenges and solutions", IEEE Wireless Communication, Volume 10, Issue 6, pp.22-29, Dec. 2003.

D. K. Shaeffer and T. H. Lee, "A 1.5-V, 1.5-GHz CMOS low noise amplifier," IEEE J.Solid-State Circuits, vol. 32, pp. 745-759, May 1997.

Sharmila G., Govindan E.G., Mantharachalam V.,"Design of Radio Frequency Amplifier in L-BAND using BJT Device AT - 42070 for Orthogonal Frequency Division Multiplexing",ICCCECE-260,Dr.M.G.R.University,2012.

S.F.W.M. Hatta, "Design of an RF BJT-Low Noise Amplifier at 1 GHz", ICSE2006 Proc. 2006, Kuala Lumpur, Malaysia

Guillermo Gonzalez, "Microwave Transistor Amplifiers", Analysis and Design, 2nd Edition, 1996.

www.avagotech.com, Avago Technologies for AT42070-datasheet.


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