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Effect of Underlap on Input Impedance, Gain and Noise Figure in FinFET Based LNA

N. Vinodhkumar, K.K. Nagarajan, R. Srinivasan


The effect of gate – drain/source underlap (Lun) on a narrow band LNA performance has been studied in 30 nm FinFET using device and mixed mode simulations. LNA circuit with two transistors in a cascode arrangement is constructed and the input impedance, gain and noise-figure have been used as performance metrics. To get the better noise performance and gain, Lun in the range of 3-5nm is recommended.


FinFET, ft, gm, Lun, LNA,mixed mode simulations

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