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Sensitivity of ft to Process Parameter Variation in 30 nm Gate Length FinFETs

K.R. Vishnupriya, B. Lakshmi, R. Srinivasan


This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate electrode work function are studied for their sensitivity on ft. It is found that ft is more sensitive to gate length, underlap, gate-oxide thickness and SD doping and less sensitive to source/drain width and length, and work function variations.


ft, FinFET, Scaling, Process Variations

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T. Skotnicki, J. Hutchby, T. King, H. Wong, and F. Boeuf, “The end of CMOS scaling,” IEEE Circuits Devices Mag., vol. 21, no. 1, pp. 16–26, Jan./Feb. 2005.

International Technology Roadmap for Semiconductor (ITRS). [Online]. Available:

L. Larson, “Silicon technology tradeoffs for radio-frequency/mixed signal systems-on-a-chip,” IEEE Trans. Electron Devices, vol. 50, no. 3, pp. 683–699, Mar. 2003.

D. J. Frank, R. H. Dennard, E. Nowak, P. M. Solomon, Y. Taur, and H. S. P. Wong, “Device scaling limits of Si MOSFETs and their application dependencies,” Proc. IEEE, vol. 89, no. 3, pp. 259–288, Mar. 2001.

F. Gamiz, J. Roldan, J. Lopez-Villanueva, P. Cartujo-Cassinello, and J. E. Carceller, “Surface roughness at the Si−SiO2 interfaces in fully depleted silicon-on-insulator inversion layers,” J. Appl. Phys., vol. 86, no. 12, pp. 6854–6863, Dec. 1999.

D. Esseni, “On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field,” IEEE Trans. Electron Devices, vol. 51, no. 3, pp. 394–401, Mar. 2004.

A. Khakifirooz and D. Antoniadis, “On the electron mobility in ultrathin SOI and GOI,” IEEE Electron Device Lett., vol. 25, no. 2, pp. 80–82, Feb. 2004.

K. Uchida, H. Watanabe, J. Koga, A. Kinoshita, and S. Takagi, “Experimental study on carrier transport mechanism in ultrathin body SOI MOSFETs,” in Proc. IEEE SISPAD, Sep. 2003, pp. 8–13.

G. Curatola and S. Nuttinck, “The role of volume inversion on the RF performance of double-gate finFETs,” IEEE Trans. Electron Devices, submitted for publication.

D. Lederer, B. Parvais, A. Mercha, N. Collaert, M. Jurczak, J.-P. Raskin, and S. Decoutere, “Dependence of finFET RF performance on fin width,” in Proc. 6th Top. Meeting SiRF, San Diego, CA, Jan. 18–20, 2006, pp. 4–6.

Shiying Xiong and Jeffrey Bokor,” Sensitivity of Double-Gate and FinFET Devices to Process Variations” IEEE Transactions on Electron Devices, vol. 50, no. 11, Nov 2003

Han-Su Kim, Kangwook Park, Hansu Oh, and Eun Seung Jung” Importance of Vth and Substrate Resistance Control for RF Performance Improvement in MOSFETs” IEEE Electron Device letters, Vol. 30, No. 10, October 2009 1099

Fathipour Morteza, Nematian Hamed, Kohani Fatemeh “ The Impact of Structural Parameters on the electrical characteristics of Nano scale DC-SOI MOSFETs in sub-thereshold region” SETIT 20074th International Conference: Sciences of Electronic,Technologies of Information and Telecommunications March 25-29, 2007

R. Shrivastava and K. Fitzpartick, “A simple model for the overlap capacitance of a VLSI MOS device.” IEEE Trans.Electron Devices, Vol. ED-29, pp.1870-1875,1982

C.-H. Lin J. He, X. Xi, H. Kaml, A. M. Nihejad, M. Chan, and C. Hu.”The Impact of Scaling on Volume Inversion in Symmetric Double-Gate MOSFETs”, IEEE transcations on Semiconductor Device Research Symposium, page no:148-149, December 2003

Chih-Hong Hwang, Tien-Yeh Li1, Ming-Hung Han, Kuo-Fu Lee, Hui-Wen Cheng1, and Yiming Li,” Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS Circuits”, Proceedings of14th-International Conference on Simulation of Semiconductor Processes and Devices,” (SISPAD), Pg No 99-102, 2009


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