Email this article 
Open Access
Subscription or Fee Access
Graded Composite Hf02/Al2O3 Dielectric AlGaAs/InGaAs MOS-HEMTs for Low Gate Leakage and High Power Application
Abstract
Composite HfO2/Al2O3-dielectric In0.2Ga0.8As/Al0.24Ga0.76 As metal–oxide semiconductor high-electron-mobility transistors (MOS-HEMTs) by using RF sputtering/ozone water oxidization, respectively, are investigated. In comparison with a conventional Schottky-gate device on the same epitaxial structure, an Al2O3 liner was chemically formed for the present MOS-HEMT to improve interfacial quality and decrease gate leakages. Moreover, a high-k HfO2 layer was further deposited on the Al2O3 liner to enhance the gate modulation capability. The present MOS-HEMT with the devised HfO2/Al2O3 dielectric stack has demonstrated excellent switching characteristics, including superior subthreshold slope (S.S.) of 70 mV/dec and high drain–source current (Ids) on–off ratio of up to 6 orders. Improved direct-current (DC), radio-frequency (RF), and high-temperature device performances of the present designs are also comprehensively studied in this work.
References
C.S. Lee , Y.H. Liao , B.Y. Chou , H.Y. Liu ,W.C. Hsu , “Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation”, Superlattices and Microstructures.72 (2014) 194–203.
B.Y. Chou, W.C. Hsu, C.S. Lee, H.Y. Liu, C.S. Ho, “Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method”, Semicond. Sci. Technol. 28 (2013) 074005.
H.C. Lin, F.M. Lee, Y.C. Cheng, K.W. Lee, F. Adriyanto, Y.H. Wang, “InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric”, Solid-State Electron. 68 (11) (2012) 27–31.
L. Pang, Y. Lian, D.S. Kim, J.H. Lee, K. Kim, “Analysis of AlGaN/GaN high electron mobility transistors with non alloyed Ohmic contacts achieved by selective area growth using plasma assisted molecular beam epitaxy”, IEEE Trans. Electron Devices 59 (10) (2012) 2650.
C.Y. Tsai, T.L. Wu, A. Chin, “High-Performance GaN MOSFET with High-k LaAlO3/SiO2 Gate Dielectric”, IEEE Electron Device Lett. 33 (1) (2012) 35–37.
C.E. Kim, I. Yun, “Effects of the interfacial layer on electrical characteristics of Al2O3/TiO2 /Al2O3 thin films for gate dielectrics”, Appl. Surf. Sci. 258 (7) (2012) 3089–3093.
C.S. Lee, C.T. Hung, B.Y. Chou, W.C. Hsu, H.Y. Liu, C.S. Ho, Y.N. Lai, “Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique”, Semicond. Sci. Technol. 27 (2012) 065006.
Y.H. Liao, Master thesis, “Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide”, Dept. Electron. Eng., Feng Chia Univ., Taichung City, Taiwan, June 2012.
Q. Li, X. Zhou, C.W. Tang, K.M. Lau, “High-Performance Inverted In0.53Ga0.47As MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD”, IEEE Electron Device Lett. 33 (9) (2012) 1246–1248.
Y. Wang, Y.T. Chen, H. Zhao, F. Xue, F. Zhou, J.C. Lee, “Impact of SF6 plasma treatment on performance of TaN–HfO2–InP metal-oxide-semiconductor field-effect transistor”, Electrochem. Solid-State Lett. 14 (7) (2011) H291–H293.
M.K. Lee, C.F. Yen, “Low Leakage and High-k Liquid Phase Deposited TiO2 and SiO2 / TiO2 Films on (NH4) 2S -Treated GaAs”, Electrochem. Solid-State Lett. 13 (10) (2010) G87–G90.
C.S. Lee, W.C. Hsu, C.S. Ho, A.Y. Kao, J. “Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12 Å using stacked HfAlOx/HfO2 gate dielectric”, Electrochem. Soc. 156 (5) (2009) H367–H371.
W.C. Tsai, C.H. Chen, H.C. Chiu, J.S. Fu, “High-Performance Inverted In0.53Ga0.47AsMOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD”, IEEE International Conference on Electron Dev. and Solid-State Cir., Hong Kong,8–10 December, 2008, pp. 1–4.
H. Zhao, D. Shahrjerdi, F. Zhu, H.S. Kim, I. OK, M. Zhang, J.H. Yum, S.K. Banerjee, J.C. Lee, Appl. Phys. Lett. 92 (2008) 253506.
D.H. Kim, J.A. del Alamo, J.H. Lee, K.S. Seo, “Self-Aligned InGaAs HEMT Architecture for Logic Applications”, IEEE Trans. Electron Devices 54 (10) (2007) 2606–2613.
Refbacks
- There are currently no refbacks.
This work is licensed under a Creative Commons Attribution 3.0 License.