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Analysis & Simulation of InSb HEMT Device for Low Power and Switching Applications
Abstract
The strained band structures of InSb are calculated, and then the DC and RF performances of the InSb HEMTs are analyzed by using the TCAD simulation. These are also compared with the InAs HEMTs. Although the compressive strain applied to the channel increases the electron effective mass m*, the InSb HEMTs still show the higher current drivability and the higher fT than the InAs HEMTs from the lower Vds. However, the severe impact ionization occurs from the lower Vds owing to the smaller impact ionization threshold energy, Eth, although the compressive strain increases it. This restricts the InSb HEMTs within the low Vds applications.
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