An Inspired Error Correction Codes for Multiple-Cell Upsets and Its Applications

Abstract

The faults suffered by SRAM cell have grown due to the continuous technology scaling. The possibility of occurrence of single-cell variation and multiple-cell variation are also increasing. The random and burst MCUs in space and other wireless applications occur due to cosmic waves. The proposed system provides a dual-mode error correction mechanism for detecting and rectifying multi cell error which is adjacent and also random. A good trade-off is achieved between error recovery and redundancy reduction for 2, 3, and 4-bit burst errors compared to existing methods. Their parity generation and syndrome mechanism is also efficient in terms of area, power, and delay. To detect and correct random errors a direct and cross vertical parity generation is employed, which results in efficient error correction for most of the random error cases. A series of code combination for adjacent and random error results in efficient redundancy and error correction compared with other existing mechanisms.